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STGW39NC60VD
N-channel 40A - 600V - TO-247 Very fast switching PowerMESHTM IGBT
Features
Type VCES VCE(sat) (Max)@ 25C <2.5V IC @100C 40A
STGW39NC60VD 600V

Low CRES / CIES ratio (no cross conduction susceptibility) High frequency operation Very soft ultra fast recovery anti parallel diode
TO-247
Applications

High frequency inverters UPS Motor drivers Figure 1. Internal schematic diagram
Induction heating
Description
Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "V" identifies a family optimized for high frequency.
Table 1.
Device summary
Order code Marking GW39NC60VD Package TO-247 Packaging Tube
STGW39NC60VD
August 2007
Rev 6
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Contents
STGW39NC60VD
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 2.2 Electrical characteristics (curves) ........................... 6 Frequency applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
3 4 5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STGW39NC60VD
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC(1) IC (1) ICL (2) VGE IF PTOT Tj
Absolute maximum ratings
Parameter Collector-emitter voltage (VGS = 0) Collector current (continuous) at 25C Collector current (continuous) at 100C Turn-off SOA minimum current Gate-emitter voltage Diode RMS forward current at Tc=25C Total dissipation at TC = 25C Operating junction temperature Value 600 70 40 220 20 30 250 - 55 to 150 Unit V A A A V A W C
1. Calculated according to the iterative formula:
T -T JMAX C I ( T ) = ----------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C
2. Vclamp = 480V , Tj = 150C, RG = 10, VGE= 15V
Table 3.
Symbol Rthj-case Rthj-case Rthj-amb
Thermal resistance
Parameter Thermal resistance junction-case max (IGBT) Thermal resistance junction-case max (diode) Thermal resistance junction-ambient max Value 0.5 1.5 50 Unit C/W C/W C/W
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Electrical characteristics
STGW39NC60VD
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol VBR(CES) VCE(SAT) VGE(th) ICES IGES gfs
Static
Parameter Test conditions Min. 600 1.8 1.7 3.75 2.5 Typ. Max. Unit V V V V A mA nA S
Collector-emitter breakdown IC = 1mA, VGE = 0 voltage Collector-emitter saturation voltage Gate threshold voltage Collector-emitter leakage current (VGE = 0) Gate-emitter leakage current (VCE = 0) Forward transconductance VGE=15V, IC=30A,Tj=25C VGE=15V, IC=30A,Tj=125C VCE= VGE, IC= 250A VCE = Max rating,Tc=25C VCE= Max rating, Tc=125C VGE = 20V , VCE = 0 VCE = 15V, IC= 30A
5.75 500 5 100 20
Table 5.
Symbol Cies Coes Cres Qg Qge Qgc
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-emitter charge Gate-collector charge Test conditions Min. Typ. 2900 298 59 126 16 46 Max Unit pF pF pF nC nC nC
VCE = 25V, f = 1 MHz, VGE= 0
VCE = 390V, IC = 30A, VGE = 15V, (see Figure 19)
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STGW39NC60VD
Electrical characteristics
Table 6.
Symbol td(on) tr (di/dt)onf td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf
Switching on/off (inductive load)
Parameter Turn-on delay time Current rise time Turn-on current slope Turn-on delay time Current rise time Turn-on current slope Off voltage rise time Turn-off delay time Current fall time Off voltage rise time Turn-off delay time Current fall time Test conditions VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=25C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=125C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=25C (see Figure 18) VCC=390 V, IC= 30A, RG=10, VGE=15V Tj=125C (see Figure 18) Min. Typ. 33 13 2500 32 14 2280 33 178 65 68 238 128 Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns
Table 7.
Symbol Eon Eoff(2) Ets
(1)
Switching energy (inductive load)
Parameter Turn-on switching losses Turn-off switching losses Total switching losses Turn-on switching losses Turn-off switching losses Total switching losses Test conditions VCC = 390V, IC = 30A , RG= 10 VGE= 15V, Tj= 25C (see Figure 20) VCC = 390V, IC = 30A RG= 10 VGE= 15V, , Tj= 125C (see Figure 20) Min Typ. 333 537 870 618 1125 1743 Max Unit J J J J J J
Eon (1) Eoff (2) Ets
1. Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) 2. Turn-off losses include also the tail of the collector current
Table 8.
Symbol
Collector-emitter diode
Parameter Test conditions If = 15A If = 15A, Tj = 125C If = 30A, Tj = 125C If = 30A, VR = 50V, Tj = 25C, di/dt =100A/s (see Figure 21) If = 30A, VR = 50V, Tj = 125C,di/dt =100A/s (see Figure 21) Min Typ. 1.3 1.1 1.2 45 56 2.55 100 290 5.8 Max 2.9 Unit V V V ns nC A ns nC A
Vf trr Qrr Irrm trr Qrr Irrm
Forward on-voltage
Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current
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Electrical characteristics
STGW39NC60VD
2.1
Figure 2.
Electrical characteristics (curves)
Output characteristics Figure 3. Transfer characteristics
Figure 4.
Transconductance
Figure 5.
Collector-emitter on voltage vs temperature
Figure 6.
Collector-emitter on voltage vs collector current
Figure 7.
Normalized gate threshold vs temperature
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STGW39NC60VD Figure 8. Normalized breakdown voltage vs temperature Figure 9.
Electrical characteristics Gate charge vs gate-emitter voltage
Figure 10. Capacitance variations
Figure 11. Switching losses vs temperature
Figure 12. Switching losses vs gate resistance Figure 13. Switching losses vs collector current
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Electrical characteristics Figure 14. Thermal impedance Figure 15. Turn-off SOA
STGW39NC60VD
Figure 16. Emitter-collector diode characteristics
Figure 17. IC vs. frequency
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STGW39NC60VD
Electrical characteristics
2.2
Frequency applications
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF)
The maximum power dissipation is limited by maximum junction to case thermal resistance:
Equation 1 PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C
The conduction losses are:
Equation 2 PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C.
Power dissipation during ON & OFF commutations is due to the switching frequency:
Equation 3 PSW = (EON + EOFF) * freq.
Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 10 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).
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Test circuit
STGW39NC60VD
3
Test circuit
Figure 19. Gate charge test circuit
Figure 18. Test circuit for inductive load switching
Figure 20. Switching waveforms
Figure 21. Diode recovery times waveform
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STGW39NC60VD
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STGW39NC60VD
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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STGW39NC60VD
Revision history
5
Revision history
Table 9.
Date 17-Nov-2005 05-May-2006 10-Jul-2006 01-Dec-2006 16-May-2007 22-Aug-2007
Document revision history
Revision 1 2 3 4 5 6 First release Inserted curves Modified value on Absolute maximum ratings Modified value on Dynamic New curves updated:Figure 5 and Figure 6 Added new Figure 17 and new section 2.2: Frequency applications Changes
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STGW39NC60VD
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